JANTX2N5686
TRANS NPN 80V 50A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N5686 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-3 package, offers a 80V collector-emitter breakdown voltage and a continuous collector current capability of up to 50A. With a maximum power dissipation of 300W, it is suitable for high-power switching and amplification circuits. Key specifications include a minimum DC current gain (hFE) of 15 at 25A and 2V, and a Vce saturation of 5V at 10A and 50A. The device operates across a wide temperature range of -55°C to 200°C. This JANTX qualification signifies adherence to stringent military standards, specifically MIL-PRF-19500/464, making it appropriate for aerospace, defense, and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 300 W |
| Qualification | MIL-PRF-19500/464 |