JANTX2N5683
TRANS NPN 60V 50A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N5683 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a maximum power dissipation of 300W. The JANTX2N5683 offers a minimum DC current gain (hFE) of 15 at 25A and 2V, and a saturation voltage of 5V at 10A collector current. It is qualified to MIL-PRF-19500/466, indicating its suitability for military and demanding industrial environments. The component is supplied in a TO-3 (TO-204AA) package for through-hole mounting and operates across a temperature range of -65°C to 200°C. The JANTX2N5683 is commonly utilized in power switching, linear regulation, and audio amplifier circuits within aerospace, defense, and industrial power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 5µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 300 W |
| Qualification | MIL-PRF-19500/466 |
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