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JANTX2N5672

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JANTX2N5672

TRANS NPN 120V 30A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Microchip Technology JANTX2N5672 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This device offers a collector-emitter breakdown voltage of 120V and can handle a continuous collector current up to 30A, with a maximum power dissipation of 6W. Key parameters include a minimum DC current gain (hFE) of 20 at 20A and 5V, and a Vce(sat) of 5V at 6A collector current. The JANTX2N5672 features a military-grade qualification under MIL-PRF-19500/488 and is packaged in a TO-3 (TO-204AA) through-hole metal can. This transistor is suitable for use in aerospace, defense, and high-power switching applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic5V @ 6A, 30A
Current - Collector Cutoff (Max)10mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20A, 5V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max6 W
QualificationMIL-PRF-19500/488

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