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JANTX2N5671

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JANTX2N5671

TRANS NPN 90V 30A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N5671 is an NPN bipolar junction transistor (BJT) rated for a collector-emitter breakdown voltage of 90V and a continuous collector current of 30A. This device features a maximum power dissipation of 6W in a TO-3 (TO-204AA) package. With a DC current gain (hFE) of a minimum of 20 at 20A and 5V, and a saturation voltage (Vce(sat)) of 5V at 6A collector and base current, the JANTX2N5671 is designed for high-power switching and amplification applications. It operates within a temperature range of -65°C to 200°C. This component meets MIL-PRF-19500/488 qualification, making it suitable for demanding environments, including aerospace and defense.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic5V @ 6A, 30A
Current - Collector Cutoff (Max)10mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20A, 5V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)90 V
Power - Max6 W
QualificationMIL-PRF-19500/488

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