JANTX2N5665
TRANS NPN 300V 5A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N5665 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 300V collector-emitter breakdown voltage and a maximum continuous collector current of 5A, with a power dissipation of 2.5W. It offers a typical DC current gain (hFE) of 25 at 1A collector current and 5V Vce. The transistor operates within a -65°C to 200°C junction temperature range and is packaged in a TO-66 (TO-213AA) through-hole configuration. Qualified to MIL-PRF-19500/455, the JANTX2N5665 is suitable for military and aerospace applications where robust performance and extended temperature operation are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/455 |