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JANTX2N5664P

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JANTX2N5664P

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N5664P is an NPN bipolar junction transistor (BJT) designed for demanding applications requiring high voltage and current handling. This device features a 200 V collector-emitter breakdown voltage and a maximum continuous collector current of 5 A, with a power dissipation capability of 2.5 W. The transistor exhibits a minimum DC current gain (hFE) of 40 at 1 A collector current and 5 V collector-emitter voltage. Specified with a Vce(sat) of 400 mV at 300 mA base current and 3 A collector current, it operates effectively within an extended temperature range of -65°C to 200°C. The JANTX2N5664P is qualified to MIL-PRF-19500/455, indicating its suitability for military and high-reliability applications. It is provided in a through-hole TO-66 (TO-213AA) package, facilitating robust assembly in power supply circuits, amplification stages, and switching applications across aerospace, defense, and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 300mA, 3A
Current - Collector Cutoff (Max)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A, 5V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max2.5 W
QualificationMIL-PRF-19500/455

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