JANTX2N5664P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N5664P is an NPN bipolar junction transistor (BJT) designed for demanding applications requiring high voltage and current handling. This device features a 200 V collector-emitter breakdown voltage and a maximum continuous collector current of 5 A, with a power dissipation capability of 2.5 W. The transistor exhibits a minimum DC current gain (hFE) of 40 at 1 A collector current and 5 V collector-emitter voltage. Specified with a Vce(sat) of 400 mV at 300 mA base current and 3 A collector current, it operates effectively within an extended temperature range of -65°C to 200°C. The JANTX2N5664P is qualified to MIL-PRF-19500/455, indicating its suitability for military and high-reliability applications. It is provided in a through-hole TO-66 (TO-213AA) package, facilitating robust assembly in power supply circuits, amplification stages, and switching applications across aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/455 |
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