JANTX2N5302
TRANS NPN 60V 30A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N5302 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a collector-emitter breakdown voltage (Vceo) of 60V and a continuous collector current (Ic) capability of 30A. With a power dissipation rating of 5W and a specified DC current gain (hFE) of 15 minimum at 15A and 2V, it is suitable for high-power switching and amplification tasks. The transistor exhibits a Vce(sat) of 3V maximum at 6A/30A. Operating across a wide temperature range of -65°C to 200°C (TJ), the JANTX2N5302 is housed in a TO-3 (TO-204AA) package, facilitating through-hole mounting. This military-grade component, qualified to MIL-PRF-19500/456, finds application in avionics, defense systems, and other high-reliability industrial environments.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 6A, 30A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 15A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
| Qualification | MIL-PRF-19500/456 |