JANTX2N5039
TRANS NPN 75V 20A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N5039 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This device features a collector-emitter breakdown voltage (Vce) of 75V and a maximum continuous collector current (Ic) of 20A. With a power dissipation capability of 140W, it is suitable for demanding power switching and amplification tasks. The JANTX2N5039 exhibits a minimum DC current gain (hFE) of 30 at 2A collector current and 5V Vce, and a saturation voltage (Vce(sat)) of 1V at 1A base current and 10A collector current. The transistor operates within a junction temperature range of -65°C to 200°C. Packaged in a TO-3 (TO-204AA) metal can, this component is qualified to MIL-PRF-19500/439, indicating its suitability for military and demanding industrial environments. It is commonly utilized in power supplies, audio amplifiers, and switching regulators.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 10A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 75 V |
| Power - Max | 140 W |
| Qualification | MIL-PRF-19500/439 |