JANTX2N4261UB
TRANS PNP 15V 0.03A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANTX2N4261UB is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a collector-emitter breakdown voltage of 15V and a maximum continuous collector current of 30mA. The JANTX2N4261UB features a minimum DC current gain (hFE) of 30 at 10mA and 1V, with a Vce(sat) of 350mV at 1mA base current and 10mA collector current. It has a maximum power dissipation of 200mW and a collector cutoff current (ICBO) of 10µA. Qualified to MIL-PRF-19500/511, this device is manufactured to military specifications. The transistor is housed in a 3-SMD, No Lead UB package suitable for surface mounting and operates across a wide temperature range from -65°C to 200°C. This component is utilized in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 200 mW |
| Qualification | MIL-PRF-19500/511 |
Request a Quote
Clients Also Buy
2N3780
POWER BJT
2N2481
NPN TRANSISTOR
JANTX2N6353
TRANS NPN DARL 150V 5A TO66
