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JANTX2N4236L

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JANTX2N4236L

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N4236L is a PNP bipolar junction transistor (BJT) designed for demanding applications. This power BJT features a 1A collector current (Ic) maximum and a 1W maximum power dissipation. It offers a collector-emitter breakdown voltage (Vce(max)) of 80V and a Vce saturation of 600mV at 100mA Ic and 1A Ic. The DC current gain (hFE) is a minimum of 40 at 100mA Ic and 1V Vce. This component is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. The JANTX2N4236L meets MIL-PRF-19500/580 qualification, indicating its suitability for military-grade applications, and operates within a temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 1V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1 W
QualificationMIL-PRF-19500/580

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