JANTX2N3997
TRANS NPN 80V 10A TO111Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3997 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This device features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 10A, with a power dissipation of 2W. The DC current gain (hFE) is a minimum of 80 at 1A collector current and 2V collector-emitter voltage. It offers a saturation voltage (Vce(sat)) of 2V at 500mA base current and 5A collector current. The JANTX2N3997 is qualified to MIL-PRF-19500/374, indicating its suitability for demanding military and aerospace environments. The transistor is housed in a TO-111 stud mount package and operates across a wide temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
| Qualification | MIL-PRF-19500/374 |