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JANTX2N3997

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JANTX2N3997

TRANS NPN 80V 10A TO111

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N3997 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This device features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 10A, with a power dissipation of 2W. The DC current gain (hFE) is a minimum of 80 at 1A collector current and 2V collector-emitter voltage. It offers a saturation voltage (Vce(sat)) of 2V at 500mA base current and 5A collector current. The JANTX2N3997 is qualified to MIL-PRF-19500/374, indicating its suitability for demanding military and aerospace environments. The transistor is housed in a TO-111 stud mount package and operates across a wide temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-111-4, Stud
Mounting TypeStud Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 500mA, 5A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 2V
Frequency - Transition-
Supplier Device PackageTO-111
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W
QualificationMIL-PRF-19500/374

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