JANTX2N3996
TRANS NPN 80V 10A TO111Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3996 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 80 V collector-emitter breakdown voltage and a maximum collector current of 10 A, with a power dissipation of 2 W. The device offers a minimum DC current gain (hFE) of 40 at 1 A and 2 V. With a low collector cutoff current of 10 µA and a Vce saturation of 2 V at 500 mA and 5 A, it ensures efficient switching and amplification. The JANTX2N3996 is housed in a TO-111 stud mount package, facilitating robust thermal management. Rated for military grade and qualified to MIL-PRF-19500/374, this transistor operates across a wide temperature range of -65°C to 200°C. It is typically utilized in aerospace, defense, and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
| Qualification | MIL-PRF-19500/374 |
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