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JANTX2N3996

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JANTX2N3996

TRANS NPN 80V 10A TO111

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N3996 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 80 V collector-emitter breakdown voltage and a maximum collector current of 10 A, with a power dissipation of 2 W. The device offers a minimum DC current gain (hFE) of 40 at 1 A and 2 V. With a low collector cutoff current of 10 µA and a Vce saturation of 2 V at 500 mA and 5 A, it ensures efficient switching and amplification. The JANTX2N3996 is housed in a TO-111 stud mount package, facilitating robust thermal management. Rated for military grade and qualified to MIL-PRF-19500/374, this transistor operates across a wide temperature range of -65°C to 200°C. It is typically utilized in aerospace, defense, and industrial power control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-111-4, Stud
Mounting TypeStud Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 500mA, 5A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A, 2V
Frequency - Transition-
Supplier Device PackageTO-111
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W
QualificationMIL-PRF-19500/374

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