JANTX2N3879
TRANS NPN 75V 7A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3879 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, packaged in a TO-66 (TO-213AA) case, offers a collector-emitter breakdown voltage of 75V and a maximum continuous collector current of 7A. It supports a power dissipation of 35W and features a minimum DC current gain (hFE) of 20 at 4A collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 1.2V at 400mA base current and 4A collector current. With a military grade qualification (MIL-PRF-19500/526) and an operating temperature range of -65°C to 200°C, this transistor is suitable for aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 25mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 5V |
| Frequency - Transition | - |
| Grade | Military |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 75 V |
| Power - Max | 35 W |
| Qualification | MIL-PRF-19500/526 |
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