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JANTX2N3767

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JANTX2N3767

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANTX2N3767 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 4A collector current capability and a 25W power dissipation rating, housed in a TO-66 (TO-213AA) through-hole package. With a collector-emitter breakdown voltage of 80V and a minimum DC current gain (hFE) of 40 at 500mA and 5V, it offers robust performance characteristics. The transistor exhibits a low saturation voltage of 2.5V at 100mA collector current and 1A collector current, with a maximum collector cutoff current of 500µA. Specified for military grade applications, this component meets the MIL-PRF-19500/518 qualification and operates across a wide temperature range of -65°C to 200°C. It is commonly utilized in aerospace, defense, and industrial power switching applications where reliability and high-temperature operation are critical.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic2.5V @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max25 W
QualificationMIL-PRF-19500/518

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