JANTX2N3766
TRANS NPN 60V 4A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3766 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 4A, with a power dissipation rating of 25W. The JANTX2N3766 is housed in a TO-66 (TO-213AA) through-hole package, facilitating robust thermal management. It exhibits a minimum DC current gain (hFE) of 40 at 500mA and 5V, and a Vce saturation of 2.5V at 100mA and 1A. With a qualification to MIL-PRF-19500/518 and an operating temperature range of -65°C to 200°C, this transistor is suitable for military and industrial applications requiring high reliability and performance in extreme environments.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 25 W |
| Qualification | MIL-PRF-19500/518 |
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