JANTX2N3737
TRANS NPN 40V 1.5A TO46Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3737 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 1.5A. With a power dissipation of 500mW and a minimum DC current gain (hFE) of 20 at 1A and 1.5V, it provides robust performance. The saturation voltage (Vce(sat)) is specified at 900mV maximum for a base current of 100mA and collector current of 1A. Operating across a wide temperature range from -65°C to 200°C, this transistor is qualified to MIL-PRF-19500/395, indicating its suitability for military-grade requirements. The JANTX2N3737 is packaged in a TO-46 (TO-206AB) through-hole case, commonly found in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-46-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 (TO-206AB) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/395 |