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JANTX2N3737

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JANTX2N3737

TRANS NPN 40V 1.5A TO46

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N3737 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 1.5A. With a power dissipation of 500mW and a minimum DC current gain (hFE) of 20 at 1A and 1.5V, it provides robust performance. The saturation voltage (Vce(sat)) is specified at 900mV maximum for a base current of 100mA and collector current of 1A. Operating across a wide temperature range from -65°C to 200°C, this transistor is qualified to MIL-PRF-19500/395, indicating its suitability for military-grade requirements. The JANTX2N3737 is packaged in a TO-46 (TO-206AB) through-hole case, commonly found in aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-46-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic900mV @ 100mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1A, 1.5V
Frequency - Transition-
Supplier Device PackageTO-46 (TO-206AB)
GradeMilitary
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max500 mW
QualificationMIL-PRF-19500/395

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