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JANTX2N3637UB

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JANTX2N3637UB

TRANS PNP 175V 1A 3SMD

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N3637UB is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component offers a collector-emitter breakdown voltage (Vceo) of 175V and a continuous collector current (Ic) capability of 1A. With a maximum power dissipation of 1.5W, it is suitable for demanding environments. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 50mA collector current and 10V Vce, and a saturation voltage (Vce(sat)) of 600mV at 5mA base current and 50mA collector current. The transistor exhibits a low collector cutoff current (Icbo) of 10µA. Packaged in a 3-SMD, No Lead (UB) surface mount configuration, it operates across an extended temperature range of -65°C to 200°C (TJ). This device is qualified to MIL-PRF-19500/357, making it ideal for use in aerospace, defense, and industrial control systems requiring robust performance and long-term reliability.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)175 V
Power - Max1.5 W
QualificationMIL-PRF-19500/357

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