JANTX2N3585
TRANS NPN 300V 2A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTX2N3585 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-66 (TO-213AA) package, features a maximum collector-emitter breakdown voltage of 300V and a continuous collector current capability of 2A. With a power dissipation of 2.5W and a guaranteed minimum DC current gain (hFE) of 25 at 1A and 10V, it offers robust performance. The saturation voltage (Vce(sat)) is specified at 750mV maximum for 125mA base current and 1A collector current. Operating across a temperature range of -65°C to 200°C, this device meets MIL-PRF-19500/384 qualification, indicating its suitability for military and high-reliability industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/384 |
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