JANTX2N3584
TRANS NPN 250V 2A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3584 is a military-grade NPN bipolar junction transistor (BJT) designed for high-reliability applications. This device features a 250V collector-emitter breakdown voltage and a maximum collector current of 2A, with a power dissipation of 2.5W. The JANTX2N3584 is housed in a TO-66 (TO-213AA) package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 25 at 1A collector current and 10V Vce, and a maximum Vce(sat) of 750mV at 125mA base current and 1A collector current. It operates across a temperature range of -65°C to 200°C. This component is qualified under MIL-PRF-19500/384, making it suitable for demanding applications in aerospace, defense, and industrial sectors requiring robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/384 |
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