JANTX2N3583
TRANS NPN 175V 1A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANTX2N3583 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 175 V and a continuous collector current capability of 1 A, dissipating up to 35 W. It is housed in a TO-66 (TO-213AA) through-hole package, facilitating robust mounting. The minimum DC current gain (hFE) is specified at 40 when operated at 500 mA collector current and 10 V collector-emitter voltage. This device supports a wide operating temperature range from -65°C to 200°C (TJ). The JANTX2N3583 finds application in demanding sectors such as aerospace, defense, and industrial power control systems where reliability and high voltage handling are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Current - Collector Cutoff (Max) | 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 35 W |
Request a Quote
Clients Also Buy
JANSM2N2222AUB
RH SMALL-SIGNAL BJT
JAN2N3585
TRANS NPN 300V 2A TO66
JAN2N708
TRANS NPN 15V TO18
