JANTX2N3439UA/TR
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3439UA-TR is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This surface mount device, packaged in a UA (4-SMD, No Lead) format on tape and reel, features a collector-emitter breakdown voltage of 350 V and a continuous collector current rating of 1 A. With a maximum power dissipation of 800 mW and a wide operating temperature range of -65°C to 200°C, it is suitable for demanding environments. The device exhibits a minimum DC current gain of 40 at 20mA collector current and 10V Vce, with a saturation voltage of 500mV at 4mA base current and 50mA collector current. Qualification under MIL-PRF-19500/368 signifies its suitability for military and aerospace applications. This component is frequently utilized in power switching and amplification circuits within these sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |