JANTX2N3439UA
TRANS NPN 350V 1A UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3439UA is a military-grade NPN bipolar junction transistor (BJT) designed for high-voltage applications. This surface-mount device, housed in a 4-SMD, No Lead UA package, offers a collector-emitter breakdown voltage of 350V and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW and an operating temperature range of -65°C to 200°C (TJ), it is suitable for demanding environments. Key electrical parameters include a minimum DC current gain (hFE) of 40 at 20mA and 10V, a collector cutoff current of 2µA, and a Vce saturation voltage of 500mV at 4mA and 50mA. This component meets MIL-PRF-19500/368 qualification standards and finds application in aerospace, defense, and industrial control systems requiring robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |