JANTX2N3421S
TRANS NPN 80V 3A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3421S is a JANTX qualified NPN bipolar junction transistor (BJT) in a TO-39 (TO-205AD) metal can package. This through-hole component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 3A. With a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 40 at 1A and 2V, the JANTX2N3421S is suitable for applications requiring robust performance in demanding environments. The device exhibits a collector saturation voltage (Vce(sat)) of 500mV at 200mA collector current and 200mA base current. Its operational temperature range extends from -65°C to 200°C. This transistor is designed for use in military and aerospace applications, meeting the stringent requirements of MIL-PRF-19500/393.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 5µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/393 |
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