JANTX2N3055
TRANS NPN 70V 15A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N3055 is an NPN bipolar junction transistor (BJT) designed for high-power switching and amplification applications. This hermetically sealed TO-3 (TO-204AA) packaged device features a 70V collector-emitter breakdown voltage and a maximum collector current of 15A. The JANTX2N3055 offers a minimum DC current gain (hFE) of 20 at 4A collector current and 4V Vce. With a maximum power dissipation of 6W and an operating temperature range of -65°C to 200°C, it is suitable for demanding environments. This component is qualified to MIL-PRF-19500/407, indicating suitability for military and aerospace applications. Key parameters include a Vce(sat) of 2V at 3.3A base current and 10A collector current, and a collector cutoff current (Icbo) of 1mA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/407 |
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