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JANTX2N2907AL

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JANTX2N2907AL

TRANS PNP 60V 0.6A TO206AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N2907AL is a bipolar junction transistor (BJT) with a PNP configuration. This device is qualified to MIL-PRF-19500/291, indicating its suitability for demanding military and aerospace applications. It features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. Power dissipation is rated at 500mW. The saturation voltage (Vce Sat) is a maximum of 1.6V at 50mA base current for 500mA collector current. The JANTX2N2907AL is housed in a TO-206AA (TO-18) metal can package, designed for through-hole mounting. It operates across an extended temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-206AA (TO-18)
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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