JANTX2N2369AUA/TR
TRANS NPN 15V 400NA UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N2369AUA-TR is an NPN bipolar junction transistor for demanding applications. This hermetically sealed, military-grade device offers a collector-emitter breakdown voltage of 15V and a maximum collector current cutoff of 400nA. With a power dissipation of 360 mW and a wide operating temperature range of -65°C to 200°C, it is suitable for high-reliability systems. The device features a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage. Its Vce(sat) is 450mV maximum at 10mA base current and 100mA collector current. Packaged in a 4-SMD, No Lead UA package and supplied on tape and reel (TR), this component meets MIL-PRF-19500/317 qualification and finds use in aerospace, defense, and other critical electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/317 |
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