JANTX2N2219
TRANS NPN 30V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N2219 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-39 metal can package (TO-205AD), offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 800mA. With a power dissipation of 800mW, it features a minimum DC current gain (hFE) of 100 at 150mA and 10V. The saturation voltage at 50mA base current and 500mA collector current is a maximum of 1.6V. Operating across an extended temperature range of -55°C to 200°C (TJ), this device is qualified to MIL-PRF-19500/251, making it suitable for demanding aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |