JANTV2N6437
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTV2N6437 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component, housed in a TO-204AD (TO-3) package, offers a collector-emitter breakdown voltage (Vce) of 100 V and a maximum collector current (Ic) of 25 A. Engineered for robust performance, it operates reliably up to a junction temperature (TJ) of 200°C. The JANTV2N6437 is suitable for use in power switching and amplification circuits across various industrial sectors, including aerospace, defense, and high-reliability power supplies. The through-hole mounting type facilitates integration into traditional PCB designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
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