JANSU2N2907AUB
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSU2N2907AUB is a PNP bipolar junction transistor designed for demanding applications. Qualified to MIL-PRF-19500/291, this component offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 600mA. The device features a maximum power dissipation of 500mW and a saturation voltage of 1.6V at 50mA collector current and 500mA base current. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage, with a collector cutoff current of 50nA. This surface mount transistor, supplied in a 3-SMD, No Lead UB package, operates across a wide temperature range of -65°C to 200°C (TJ). It finds application in aerospace, defense, and other high-reliability electronic systems.
Additional Information
Series: Military, MIL-PRF-19500/291RoHS Status: RoHS CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500 |
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