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JANSU2N2222AUB

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JANSU2N2222AUB

SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSU2N2222AUB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component, part of the MIL-PRF-19500/255 military specification series, offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 800mA. With a maximum power dissipation of 500mW, it is suitable for surface mount applications requiring reliable performance across a broad operating temperature range of -65°C to 200°C. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. The UB package, a 3-SMD, No Lead configuration, is supplied in bulk packaging. This device is frequently utilized in aerospace and defense systems, as well as industrial control applications where robust and high-reliability components are critical.

Additional Information

Series: Military, MIL-PRF-19500/255RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
QualificationMIL-PRF-19500/255

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