JANSR2N5154U3/TR
TRANS NPN 80V 2A U3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology presents the JANSR2N5154U3-TR, a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device offers a collector-emitter breakdown voltage of 80V and can handle a continuous collector current (Ic) of up to 2A. With a maximum power dissipation of 1W and a junction temperature range of -65°C to 200°C, it is suitable for operation in harsh environments. The transistor exhibits a minimum DC current gain (hFE) of 70 at 2.5A and 5V, with a Vce(sat) of 1.5V at 500mA Ic and 5A Ib. Qualified to MIL-PRF-19500/544 and featuring a U3 (SMD-0.5) package, this component is commonly utilized in aerospace, defense, and industrial systems requiring robust performance. The JANSR2N5154U3-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | U3 (SMD-0.5) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/544 |
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