JANSR2N5154L
RH POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N5154L is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This MIL-PRF-19500/544 qualified component features an 80V collector-emitter breakdown voltage and a maximum collector current of 2A. With a power dissipation of 1W and a minimum DC current gain (hFE) of 70 at 2.5A and 5V, it offers robust performance. The transistor operates across a wide temperature range of -65°C to 200°C, housed in a TO-205AA (TO-5-3 Metal Can) package suitable for through-hole mounting. This device is utilized in demanding sectors such as aerospace and defense, where stringent performance and reliability standards are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/544 |
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