JANSR2N5153U3/TR
RH POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N5153U3-TR is a high-reliability PNP bipolar junction transistor designed for demanding applications. This military-grade component features an 80 V collector-emitter breakdown voltage and a maximum collector current of 2 A, with a power dissipation capability of 1.16 W. It offers a minimum DC current gain (hFE) of 70 at 2.5 A and 5 V. The transistor is provided in a U3 surface-mount package, supplied on tape and reel for automated assembly. With an extended operating temperature range of -65°C to 200°C (TJ) and qualification under MIL-PRF-19500/545, this device is suitable for aerospace, defense, and industrial systems requiring robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | U3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.16 W |
| Qualification | MIL-PRF-19500/545 |
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