JANSR2N5153L
RH POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSR2N5153L is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole device, packaged in a TO-205AA (TO-5-3 Metal Can), offers a continuous collector current (Ic) capability of up to 2 A and a maximum power dissipation of 1 W. It features a collector-emitter breakdown voltage (Vce) of 80 V and a saturation voltage (Vce(sat)) of 1.5 V at 500 mA collector current and 5 A base current. The DC current gain (hFE) is a minimum of 70 at 2.5 A collector current and 5 V collector-emitter voltage. Operating across an extended temperature range from -65°C to 200°C (TJ), this JAN-qualified transistor is suitable for demanding environments in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |