JANSR2N4449
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
The Microchip Technology JANSR2N4449 is an NPN bipolar junction transistor (BJT) designed for small-signal applications. This through-hole component, housed in a TO-46 metal can package, offers a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 500 mW. It features a minimum DC current gain (hFE) of 20 configured at 100mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at a maximum of 450mV when driven by 10mA base current for 100mA collector current. Exhibiting a collector cutoff current of 400nA, this device is qualified under MIL-PRF-19500/317, indicating its suitability for military-grade applications. Operating across an extended temperature range from -65°C to 200°C, the JANSR2N4449 finds utility in demanding environments within aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/317 |
Request a Quote
Clients Also Buy
2N5581
TRANS NPN 50V 0.8A TO46
JAN2N5339U3
TRANS NPN 100V 5A U-3
JAN2N3735
TRANS NPN 40V 1.5A TO39
