JANSR2N3700UB
TRANS NPN 80V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3700UB is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component offers a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. Featuring a minimum DC current gain (hFE) of 50 at 500mA and 10V, it provides reliable amplification characteristics. The device exhibits a collector-emitter saturation voltage of 500mV at 50mA and 500mA, ensuring efficient switching. With a maximum power dissipation of 500mW and an extended operating temperature range of -65°C to 200°C, this transistor is manufactured to military specifications, holding a MIL-PRF-19500/391 qualification. Its UB package is suitable for surface mounting. This component finds application in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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