JANSR2N3637UB
TRANS PNP 175V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3637UB is a PNP bipolar junction transistor designed for demanding applications. This military-grade component features a 175V collector-emitter breakdown voltage and a maximum collector current of 1A, with a power dissipation of 1.5W. Key parameters include a minimum DC current gain (hFE) of 100 at 10mA and 10V, and a saturation voltage (Vce Sat) of 600mV at 5mA base current and 50mA collector current. The cutoff current (ICBO) is a maximum of 10µA. The transistor is supplied in a UB package, suitable for surface mounting, and operates across a wide temperature range of -65°C to 200°C. Qualified to MIL-PRF-19500/357, this device is utilized in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1.5 W |
| Qualification | MIL-PRF-19500/357 |
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