JANSR2N3637L
TRANS PNP 175V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSR2N3637L is a high-reliability PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 175V and a continuous collector current capability of 1A, with a maximum power dissipation of 1W. The JANSR2N3637L is packaged in a TO-205AA (TO-5-3 Metal Can) through-hole configuration, suitable for robust mounting. It exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 10V collector-emitter voltage, with a low collector cutoff current (ICBO) of 10µA. The saturation voltage (Vce(sat)) is rated at a maximum of 600mV at 5mA base current and 50mA collector current. This device meets MIL-PRF-19500/357 qualification and operates across a wide temperature range of -65°C to 200°C, making it ideal for military and aerospace applications requiring extreme environmental resilience.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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