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JANSR2N3637

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JANSR2N3637

TRANS PNP 175V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N3637 is a high-reliability PNP bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This device is qualified to MIL-PRF-19500/357, indicating its suitability for demanding military applications. It offers a maximum collector current of 1A and a collector-emitter breakdown voltage of 175V. The transistor exhibits a minimum DC current gain (hFE) of 100 at 50mA and 10V, with a saturation voltage (Vce(sat)) of 600mV at 5mA base current and 50mA collector current. Maximum power dissipation is rated at 1W. The JANSR2N3637 operates across an extended temperature range of -65°C to 200°C (TJ), making it robust for harsh environmental conditions found in aerospace and defense systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)175 V
Power - Max1 W
QualificationMIL-PRF-19500/357

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