JANSR2N3637
TRANS PNP 175V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3637 is a high-reliability PNP bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This device is qualified to MIL-PRF-19500/357, indicating its suitability for demanding military applications. It offers a maximum collector current of 1A and a collector-emitter breakdown voltage of 175V. The transistor exhibits a minimum DC current gain (hFE) of 100 at 50mA and 10V, with a saturation voltage (Vce(sat)) of 600mV at 5mA base current and 50mA collector current. Maximum power dissipation is rated at 1W. The JANSR2N3637 operates across an extended temperature range of -65°C to 200°C (TJ), making it robust for harsh environmental conditions found in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |