JANSR2N3501UB
TRANS NPN 150V 0.3A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3501UB is a military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount component, housed in a 4-SMD, No Lead UB package, offers a collector-emitter breakdown voltage of 150V and a continuous collector current rating of 300mA. With a maximum power dissipation of 500mW and an operating temperature range of -65°C to 200°C, it meets stringent MIL-PRF-19500/366 qualifications. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation voltage of 400mV at 15mA and 150mA. The collector cutoff current (ICBO) is a maximum of 10µA. This device is commonly utilized in aerospace and defense systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/366 |
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