JANSR2N3501
TRANS NPN 150V 300MA TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3501 is a military-grade NPN bipolar junction transistor. This component features a collector-emitter breakdown voltage (Vce) of 150V and a continuous collector current (Ic) capability of 300mA. The minimum DC current gain (hFE) is 100 at 150mA collector current and 10V collector-emitter voltage. It offers a saturation voltage (Vce Sat) of 400mV at 15mA base current and 150mA collector current. The maximum power dissipation is 500mW. This transistor is housed in a TO-39 (TO-205AD) metal can package and is designed for through-hole mounting. The operating temperature range is -65°C to 200°C. This component is qualified under MIL-PRF-19500/366. It finds application in demanding environments across aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/366 |