JANSR2N3499
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSR2N3499 is an NPN bipolar junction transistor (BJT) specified for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 500mA. With a maximum power dissipation of 1W and an operating temperature range of -65°C to 200°C, it meets stringent military-grade requirements, as evidenced by its MIL-PRF-19500/366 qualification. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce(sat) of 600mV at 30mA/300mA. Applications include defense, aerospace, and industrial systems requiring robust performance in harsh environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |