JANSR2N3498L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSR2N3498L is a military-grade, NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, packaged in a TO-205AA (TO-5AA) metal can, offers a collector-emitter breakdown voltage of 100 V and a maximum collector current of 500 mA. It features a power dissipation capability of 1 W and a low collector cutoff current of 10 µA (ICBO). The minimum DC current gain (hFE) is specified at 40 at 150 mA and 10 V. Saturation voltage (Vce) is a maximum of 600 mV at 30 mA base current and 300 mA collector current. Operating temperature ranges from -65°C to 200°C (TJ). This device adheres to MIL-PRF-19500/366 qualification standards, making it suitable for aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |