JANSR2N3440L
RH POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3440L is an NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a 250V collector-emitter breakdown voltage and a continuous collector current capability of 1A, this component is rated for 800mW maximum power dissipation. The MIL-PRF-19500/368 qualification and military grade designation underscore its suitability for rigorous environments. Operating across an extended temperature range of -55°C to 200°C, the JANSR2N3440L utilizes a TO-205AA (TO-5-3 Metal Can) through-hole package. Key electrical parameters include a minimum DC current gain (hFE) of 40 at 20mA and 10V, a collector cutoff current of 2µA, and a Vce(sat) of 500mV at 4mA base current and 50mA collector current. This device is commonly employed in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
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