JANSR2N3440
TRANS NPN 250V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSR2N3440 is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This through-hole component offers a maximum collector-emitter breakdown voltage of 250V and a continuous collector current capability of 1A. It exhibits a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V collector-emitter voltage. The maximum collector cutoff current is 2µA. The transistor features a saturation voltage (Vce(sat)) of 500mV at 4mA base current and 50mA collector current. Operating temperature ranges from -65°C to 200°C (TJ). This device is qualified under MIL-PRF-19500/368, making it suitable for demanding applications in aerospace, defense, and industrial systems requiring high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Qualification | MIL-PRF-19500/368 |
Request a Quote
Clients Also Buy
JAN2N5339U3
TRANS NPN 100V 5A U-3
JAN2N3735
TRANS NPN 40V 1.5A TO39
2N5729
POWER BJT
