JANSR2N3439U4/TR
RH POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSR2N3439U4-TR is an NPN Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a 350 V collector-emitter breakdown voltage and a maximum collector current of 1 A. With a power dissipation of 800 mW and a saturation voltage of 500 mV at 4 mA base current and 50 mA collector current, it offers efficient operation. The minimum DC current gain (hFE) is 40 at 20 mA collector current and 10 V collector-emitter voltage. The transistor exhibits a low collector cutoff current of 2 µA. Its operating temperature range is -65°C to 200°C (TJ). The JANSR2N3439U4-TR is supplied in a U4 surface mount package, presented on tape and reel for automated assembly. This device finds application in power switching and amplification circuits across various industrial and military sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | U4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
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