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JANSR2N3439L

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JANSR2N3439L

TRANS NPN 350V 1A TO5

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N3439L is a military-grade NPN bipolar junction transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 350V and a maximum continuous collector current of 1A. With a power dissipation of 800mW and a saturation voltage of 500mV at 4mA/50mA, it offers robust performance. The DC current gain (hFE) is a minimum of 40 at 20mA/10V, with a low collector cutoff current of 2µA. Qualified to MIL-PRF-19500/368, the JANSR2N3439L is housed in a TO-205AA, TO-5-3 Metal Can package, suitable for through-hole mounting. It operates across an extended temperature range of -65°C to 200°C (TJ). This device is commonly found in aerospace and defense systems requiring high reliability.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)2µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max800 mW
QualificationMIL-PRF-19500/368

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