JANSR2N3439L
TRANS NPN 350V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3439L is a military-grade NPN bipolar junction transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 350V and a maximum continuous collector current of 1A. With a power dissipation of 800mW and a saturation voltage of 500mV at 4mA/50mA, it offers robust performance. The DC current gain (hFE) is a minimum of 40 at 20mA/10V, with a low collector cutoff current of 2µA. Qualified to MIL-PRF-19500/368, the JANSR2N3439L is housed in a TO-205AA, TO-5-3 Metal Can package, suitable for through-hole mounting. It operates across an extended temperature range of -65°C to 200°C (TJ). This device is commonly found in aerospace and defense systems requiring high reliability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
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