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JANSR2N3439

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JANSR2N3439

TRANS NPN 350V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N3439 is an NPN bipolar junction transistor featuring a 350V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. This through-hole device, housed in a TO-39 (TO-205AD) metal can package, offers a power dissipation of 800mW. It exhibits a minimum DC current gain (hFE) of 40 at 20mA and 10V, with a saturation voltage (Vce(sat)) of 500mV at 4mA base current and 50mA collector current. The device operates over an extended temperature range of -65°C to 200°C (TJ) and is qualified to MIL-PRF-19500/368, indicating its suitability for military applications. This component is utilized in high-reliability systems within the aerospace and defense industries.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)2µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max800 mW
QualificationMIL-PRF-19500/368

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