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JANSR2N3057A

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JANSR2N3057A

TRANS NPN 80V 1A TO46

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N3057A is an NPN bipolar junction transistor. This device features a maximum collector-emitter breakdown voltage of 80 V and a continuous collector current rating of 1 A. The transistor offers a minimum DC current gain (hFE) of 50 at 500 mA and 10 V. It has a maximum collector-emitter saturation voltage of 500 mV at 50 mA and 500 mA, with a collector cutoff current of 10 nA. The JANSR2N3057A is rated for a maximum power dissipation of 500 mW. This component is supplied in a TO-46-3 Metal Can package, suitable for through-hole mounting. It operates across a temperature range of -65°C to 200°C (TJ) and is qualified to MIL-PRF-19500/391, indicating its suitability for military and demanding applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AB, TO-46-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 10V
Frequency - Transition-
Supplier Device PackageTO-46
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW
QualificationMIL-PRF-19500/391

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