JANSR2N3057A
TRANS NPN 80V 1A TO46Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3057A is an NPN bipolar junction transistor. This device features a maximum collector-emitter breakdown voltage of 80 V and a continuous collector current rating of 1 A. The transistor offers a minimum DC current gain (hFE) of 50 at 500 mA and 10 V. It has a maximum collector-emitter saturation voltage of 500 mV at 50 mA and 500 mA, with a collector cutoff current of 10 nA. The JANSR2N3057A is rated for a maximum power dissipation of 500 mW. This component is supplied in a TO-46-3 Metal Can package, suitable for through-hole mounting. It operates across a temperature range of -65°C to 200°C (TJ) and is qualified to MIL-PRF-19500/391, indicating its suitability for military and demanding applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |