JANSR2N3019S
TRANS NPN 80V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSR2N3019S is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This through-hole component offers a 80V collector-emitter breakdown voltage and a maximum collector current of 1A. It features a minimum DC current gain (hFE) of 50 at 500mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA base current and 500mA collector current. With a maximum power dissipation of 800mW, this transistor is qualified to MIL-PRF-19500/391 and operates across an extended temperature range of -65°C to 200°C. This component is suitable for applications in high-reliability defense and aerospace systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/391 |